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| PD - 91853C SI4410DY HEXFET(R) Power MOSFET l l l l l N-Channel MOSFET Low On-Resistance Low Gate Charge Surface Mount Logic Level Drive S S S G 1 8 7 A A D D D D 2 VDSS = 30V 3 6 4 5 RDS(on) = 0.0135 Description This N-channel HEXFET(R) Power MOSFET is produced using International Rectifier's advanced HEXFET power MOSFET technology. The low on-resistance and low gate charge inherent to this technology make this device ideal for low voltage or battery driven power conversion applications The SO-8 package with copper leadframe offers enhanced thermal characteristics that allow power dissipation of greater that 800mW in typical board mount applications. T o p V ie w SO-8 Absolute Maximum Ratings Parameter VDS ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C dv/dt EAS VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Peak Diode Recovery dv/dt Single Pulse Avalanche Energy Gate-to-Source Voltage Junction and Storage Temperature Range Max. 30 10 8.0 50 2.5 1.6 0.02 5.0 400 20 -55 to + 150 Units V A W W/C V/ns mJ V C Thermal Resistance Parameter RJA Maximum Junction-to-Ambient Max. 50 Units C/W www.irf.com 1 11/22/99 SI4410DY Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Min. 30 --- --- --- 1.0 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. Max. Units Conditions --- --- V VGS = 0V, ID = 250A 0.029 --- V/C Reference to 25C, ID = 1mA 0.010 0.0135 VGS = 10V, ID = 10A 0.015 0.020 VGS = 4.5V, ID = 5.0A --- --- V VDS = VGS, ID = 250A 35 --- S VDS = 15V, ID = 10A --- 1.0 VDS = 30V, VGS = 0V A --- 25 VDS = 30V, VGS = 0V, TJ = 55C --- -100 VGS = -20V nA --- 100 VGS = 20V 30 45 ID = 10A 5.4 --- nC VDS = 15V 6.5 --- VGS = 10V, See Fig. 10 11 --- VDD = 25V 7.7 --- ID = 1.0A ns 38 --- RG = 6.0 44 --- RD = 25, 1585 --- VGS = 0V 739 --- pF VDS = 15V 106 --- = 1.0MHz, See Fig. 9 Source-Drain Ratings and Characteristics IS ISM VSD trr Parameter Continuous Source Current (Diode Conduction) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Min. Typ. Max. Units --- --- --- --- --- --- 0.7 50 2.3 A 50 1.1 80 V ns Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = 2.3A, VGS = 0V TJ = 25C, IF = 2.3A D S Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 8.0mH RG = 25, IAS = 10A. (See Figure 15) Pulse width 300s; duty cycle 2%. When mounted on FR4 Board, t 10 sec ISD 2.3A, di/dt 130A/s, VDD V(BR)DSS, TJ 150C 2 www.irf.com SI4410DY 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 1000 I D , Drain-to-Source Current (A) 100 I D , Drain-to-Source Current (A) VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 100 4.5V 4.5V 10 0.1 20s PULSE WIDTH TJ = 25 C 1 10 100 10 0.1 20s PULSE WIDTH TJ = 150 C 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.0 TJ = -5 5 C TJ = 2 5 C TJ = 1 5 0 C R DS(on) , Drain-to-Source On Resistance (Normalized) 10A ID = 11A I D , D rain-to -S o u rce C urre n t (A ) 1.5 100 1.0 0.5 10 4 8 V DS = 25V 2 0 s P U L S E W ID TH 12 16 A 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 V G S , G a te-to-Sou rce Volta ge (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 SI4410DY 2400 2000 VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 20 ID = 10A VDS = 24V VDS = 15V 16 C, Capacitance (pF) 1600 Ciss 12 1200 Coss 800 8 400 4 Crss 0 1 10 100 0 0 10 20 30 40 50 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 1000 OPERATION IN THIS AREA LIMITED BY RDS(on) ISD , Reverse Drain Current (A) 10 TJ = 150 C TJ = 25 C 1 I D , Drain Current (A) 100 10us 10 100us 1ms 0.1 0.4 V GS = 0 V 0.5 0.6 0.7 0.8 0.9 1.0 1 0.1 TC = 25 C TJ = 150 C Single Pulse 1 10 10ms 100 1000 VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com SI4410DY 10.0 100 8.0 80 I D , Drain Current (A) P ower ( W ) 6.0 60 4.0 40 2.0 20 0.0 25 50 75 100 125 150 0 0.01 A 0.1 1 10 100 TC , Case Temperature ( C) T im e (sec ) Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10. Typical Power Vs. Time 100 Thermal Response (Z thJA ) D = 0.50 10 0.20 0.10 0.05 1 0.02 0.01 P DM t1 0.1 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.0001 0.001 0.01 0.1 1 10 100 t2 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 SI4410DY R D S (on ) , Drain-to-S ource On Resistance () R D S(on ) , D rain-to-S ource O n Resistance () 0.20 0.03 0.16 0.02 0.12 I D = 10A 0.01 0.08 V G S = 10V V G S = 4.5V 0.04 0.00 0 10 20 30 40 50 A 0.00 3 4 5 6 7 8 9 10 A I D , D rain C urren t (A ) V G S , G ate-to- Sou rc e V oltage (V ) Fig 12. Typical On-Resistance Vs. Drain Current Fig 13. Typical On-Resistance Vs. Gate Voltage 3.0 1000 EAS , Single Pulse Avalanche Energy (mJ) TOP 800 V G S (th) , V arian ce ( V ) BOTTOM ID 4.5A 8.0A 10A 2.5 600 I D =2 50A 2.0 400 200 1.5 -60 -40 -20 0 20 40 60 80 100 120 A 140 160 0 25 50 75 100 125 150 T J , Jun ction T em peratu re (C ) Starting TJ , Junction Temperature ( C) Fig 14. Typical Threshold Voltage Vs.Temperature Fig 15. Maximum Avalanche Energy Vs. Drain Current 6 www.irf.com SI4410DY SO-8 Package Outline D -B- DIM 5 INCHES MIN .0532 .0040 .014 .0075 .189 .150 MAX .0688 .0098 .018 .0098 .196 .157 MILLIMETERS MIN 1.35 0.10 0.36 0.19 4.80 3.81 MAX 1.75 0.25 0.46 0.25 4.98 3.99 A 6 5 H 0.25 (.010) M AM 5 8 E -A- 7 A1 B C D E 1 2 3 4 e 6X K x 45 e1 A e e1 H K L .050 BASIC .025 BASIC .2284 .011 0.16 0 .2440 .019 .050 8 0.72 (.028 ) 8X 1.27 BASIC 0.635 BASIC 5.80 0.28 0.41 0 6.20 0.48 1.27 8 0.10 (.004) L 8X 6 C 8X -CB 8X 0.25 (.010) NOTES: A1 M CASBS RECOMMENDED FOOTPRINT 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982. 2. CONTROLLING DIMENSION : INCH. 3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES). 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA. 5 6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006). DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE.. 1.27 ( .050 ) 3X 6.46 ( .255 ) 1.78 (.070) 8X SO-8 Part Marking Information www.irf.com 7 SI4410DY SO-8 Tape & Reel Information Dimensions are shown in millimeters (inches) T E R M IN A L N U M B E R 1 1 2.3 ( .4 84 ) 1 1.7 ( .4 61 ) 8 .1 ( .31 8 ) 7 .9 ( .31 2 ) F E E D D IR E C T IO N N O TE S : 1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ). 3 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 . 33 0.0 0 (12 .9 92 ) MAX. 14 .4 0 ( .5 6 6 ) 12 .4 0 ( .4 8 8 ) NOTE S : 1 . C O N T R O L LIN G D IM E N S IO N : M IL L IM E T E R . 2 . O U T L IN E C O N FO R M S T O E IA -48 1 & E IA -54 1. WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 Data and specifications subject to change without notice. 11/99 8 www.irf.com |
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